رشد بلور‏های BiVO4 با روش هیدروترمال و بدون استفاده از جوانه به منظور کاربرد در صنایع تصفیۀ آب و تولید هیدروژن

نوع مقاله : پژوهشی

نویسندگان

1 دانشجوی دکتری دانشکدۀ علوم و فنون دانشگاه تهران

2 استادیار دانشکدۀ علوم و فنون، دانشگاه تهران

3 دانشیار دانشکدۀ علوم و فنون دانشگاه تهران

چکیده

لایه‌‌های نازک بلورهای بیسموت وانادیت (BiVO4) با استفاده از روش هیدروترمال روی زیرلایۀ بدون پوشش FTO به منظور کاربرد در صنایع تصفیۀ آب و تولید هیدروژن نشانده شده‌اند. نمونه‏ها پس از لایه‌‌نشانی در بازۀ دمایی 450 تا 550 درجۀ سانتی‌گراد پخت شده‏اند. الگوی بلورشناسی اشعۀ ایکس (XRD) که برای لایه‏های بیسموت وانادیت آماده شده، تأیید‌کنندۀ ساختار مونوکلینیک این بلور است. تصاویر میکروسکوپ الکترونی روبشی (SEM) برای بلور، شکل دوهرم‏های برش داده‌شده‏ را نشان می‏دهد که از نظر فوتوالکتروشیمیایی فعال‌اند. با کنترل و بهینه‏سازی پارامترهایی همچون دما، مدت لایه‌نشانی، غلظت محلول پیش‏ماده و دمای پخت نمونه‌ها، لایه‏ای یکنواخت و با چسبندگی زیاد از BiVO4 ایجاد شد. لایۀ بهینۀ BIVO4/FTO در دمای 120 درجۀ سانتی‏گراد در حداقل زمان (چهار ساعت) با به‌کارگیری محلولی به غلظت 27 میلی‏مولار از پیش‌ماده‏های بیسموت وانادیت که در pH معادل 2/1 بود، به دست آمد. به عنوان معیاری از عملکرد کریستال‏های رشد داده‌شده در واکنش‏های تولید هیدروژن و واکنش‏های تجزیۀ آلاینده‏های آلی آب، اندازه‏گیری ولتامتری روبش خطی نمونه‌ها انجام شده و با یکدیگر مقایسه شده‌اند. نتیجۀ تست‏های ولتامتری روبش خطی پاسخ نوری نمونه را به میزان 70 میکروآمپر بر سانتی‏متر مربع در ولتاژ 1 ولت (در مقایسه با الکترود مرجع Ag/AgCl) برای نمونه‏های پخت‌شده در دماهای بیشتر از 500 درجه نشان می‏دهد. همچنین، یک مدل ساده برای درک بهتر رفتار رشد بلورهای BiVO4 تحت شرایط رشد مختلف پیشنهاد شد.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Hydrothermally in-situ Deposited BiVO4 Crystals Via a Seed-free Approach and its Application in Water Treatment and Hydrogen Generation

نویسندگان [English]

  • Mohammad Reza Nazemzadegan 1
  • Roghayeh Ghasempour 2
  • Hossein Yousefi 3
1 Ph.D. Student, Faculty of New Science and Technology, University of Tehran, Tehran, Iran
2 Assistant Professor, Faculty of New Science and Technology, University of Tehran, Tehran, Iran
3 Associate Professor, Faculty of New Science and Technology, University of Tehran, Tehran, Iran
چکیده [English]

Thin films of Bismuth Vanadate (BiVO4)crystals are deposited on bare FTO substrates using hydrothermal method. The samples are annealed in a temperature range from 450 oC to 550 oC. X-Ray Diffraction (XRD) pattern of the prepared BiVO4 thin films confirms its monoclinic structure. Scanning Electron Microscopy (SEM) images determine the truncated bipyramid shape of the crystals while a significant number of crystals expose their high photoelectrochemically active facet. By controlling and optimizing parameters such as temperature, deposition time, precursor concentration, and annealing temperature, a uniform and robust BiVO4 layer is synthesized. Finally, the optimum BiVO4/FTO layer is prepared at 120 oC for at least 4 hours by using a 0.027M BiVO4 precursor solution with a pH of 1.2. In order to have a measurement for the application of the fabricated crystals in water treatment and Hydrogen generation, the linear sweep voltammetry (LSV) measurements of samples are measured and compared. The LSV tests show a photo-response up to 70 µA/cm2 at V=1 V (vs Ag/AgCl) for BiVO4/FTO samples annealed at temperatures higher than 500 oC. In addition,  a simple model are proposed to understand the growth behavior of BiVO4 crystals under different growth conditions.

کلیدواژه‌ها [English]

  • Monoclinic BiVO4
  • Seed-free hydrothermal growth
  • PEC

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اکوهیدرولوژی
دوره 5، شماره 4
دی 1397
صفحه 1355-1369

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سابقه مقاله

  • تاریخ دریافت: 01 شهریور 1397
  • تاریخ بازنگری: 13 آبان 1397
  • تاریخ پذیرش: 13 آبان 1397

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